 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FDFM2P110 Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode April 2005 FDFM2P110 Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Features -3.5 A, -20 V RDS(ON) = 140 m @ VGS = -4.5 V RDS(ON) = 200 m @ VGS = -2.5 V Low Profile - 0.8mm maximum - in the new package MicroFET 3x3 mm General Description FDFM2P110 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. Applications DC-DC Converter Pin 1 1 2 3 6 5 4 Top Bottom MLP 3x3 Absolute Maximum Ratings TA = 25C unless otherwise noted Symbol VDSS VGSS ID VRRM IO PD TJ, TSTG RJA RJA Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current Power Dissipation (Steady State) (Note 1a) (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range (Note 1a) Parameter Ratings -20 12 -3.5 -10 20 2 2.4 1.2 -55 to +150 Units V V A V A W C C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 60 145 Package Marking and Ordering Information Device Marking 2P110 Device FDFM2P110 Reel Size 7" Tape width 12mm Quantity 3000 units (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDFM2P110 Rev. C2 FDFM2P110 Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Electrical Characteristics TA = 25C unless otherwise noted Symbol Off Characteristics BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -16 V, VGS = 0 V VGS = 12 V, VDS = 0 V VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS = -4.5 V, ID = -3.5 A VGS = -4.5 V, ID = -3.0 A VGS = -4.5 V, ID = -3.5A, TJ = 125C VGS = -2.5 V, VDS = -5 V VDS = -5 V, ID = -3.5 A VDS = -10 V, VGS = 0 V, f = 1.0 MHz -10 6 -0.6 -1.0 3 101 145 136 140 200 202 -20 -11 -1 100 -1.5 V mV/C A nA Parameter Test Conditions Min Typ Max Units On Characteristics (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance V mV/C m ID(on) gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr VR IR VF A S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS = 0 V, f = 1.0 MHz VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 280 65 35 7 pF pF pF 16 22 20 6.4 4 ns ns ns ns nC nC nC Switching Characteristics (Note 2) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -10 V, ID = -3.5 A, VGS = -4.5 V 8 12 11 3.2 3 0.7 1 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2 A Diode Reverse Recovery Time Diode Reverse Recovery Charge IF = -3.5 A, dIF/dt = 100 A/s (Note 2) -0.9 13 3 -2 -1.2 A V nS nC Schottky Diode Characteristic Reverse Voltage Reverse Leakage IR = 1 mA VR = 5 V IF = 1 A TJ = 25C TJ = 100C Forward Voltage TJ = 25C 0.32 20 100 10 0.39 V A mA V 2 FDFM2P110 Rev. C2 www.fairchildsemi.com FDFM2P110 Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 70C/W when mounted on a 1 in2 pad of 2 oz copper b) 145C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3 FDFM2P110 Rev. C2 www.fairchildsemi.com FDFM2P110 Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics 10 VGS = -4.5V 8 -3.5V 2.4 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 2 VGS = -2.5V 1.8 1.6 -3.0V 1.4 1.2 1 0.8 -3.5V -4.0V -4.5V -3.0V -ID, DRAIN CURRENT (A) 6 -2.5V 4 2 -2.0V 0 0 1 2 3 4 5 -V DS, DRAIN-SOURCE VOLTAGE (V) 0 2 4 6 8 10 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.44 I D = -3.5A VGS = -4.5V I D = -1.8A 0.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 RDS(ON) , ON-RESISTANCE (OHM) 0.36 0.32 0.28 TA = 125 C 0.24 0.2 0.16 TA = 25C 0.12 0.08 1 2 3 4 5 -V GS, GATE TO SOURCE VOLTAGE (V) 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 3. On-Resistance Variation with Temperature. 8 VDS = -5V T A = -55C 100 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. -IS, REVERSE DRAIN CURRENT (A) 25C V GS = 0V 10 1 0.1 0.01 0.001 0.0001 -55C TA = 125C 25C -ID, DRAIN CURRENT (A) 6 125C 4 2 0 0.5 1 1.5 2 2.5 3 3.5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1 1.2 -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4 FDFM2P110 Rev. C2 www.fairchildsemi.com FDFM2P110 Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics 5 500 I D = -3.5A 4 -15V 3 V DS = -5V -10V 400 f = 1MHz VGS = 0 V -V GS, GATE-SOURCE VOLTAGE (V) CAPACITANCE (pF) Ciss 300 2 200 Coss 100 Crss 1 0 0 1 2 Q g, GATE CHARGE (nC) 3 4 0 0 4 8 12 16 20 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 10 0.1 IF, FORWARD LEAKAGE CURRENT (A) I R, REVERSE LEAKAGE CURRENT (A) TJ = 125 C 1 TJ = 125 C 0.01 T J = 25C 0.1 0.001 TJ = 100 C 0.0001 0.01 0.00001 TJ = 25C 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, FORWARD VOLTAGE (V) 0.000001 0 5 10 15 20 VR, REVERSE VOLTAGE (V) Figure 9. Schottky Diode Forward Voltage. Figure 10. Schottky Diode Reverse Current. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 R JA(t) = r(t) * R JA R JA =145 C/W P(pk) t1 t2 T J - T A = P * R JA(t) Duty Cycle, D = t1 / t2 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. 5 FDFM2P110 Rev. C2 www.fairchildsemi.com FDFM2P110 Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Package Dimensions 2.65 0.15 C 3.0 A B 2.10 1.65 3.0 (0.70) 1 PIN #1 IDENT 6 4 2X 3.50 3 0.65 TYP 0.15 C 0.95 TYP 2X TOP VIEW RECOMMENDED LAND PATTERN 0.8 MAX 0.10 C (0.20) 0.08 C 0.05 0.00 6 C 4 SEATING PLANE SIDE VIEW PIN #1 IDENT 1 0.45 0.20 2.25 MAX 3 1 1.65 MAX 3 RECOMMENDED COPPER TRACE 0.2 MIN 6 0.95 1.90 4 0.30~0.45 0.10 M C A B 0.05 M C BOTTOM VIEW NOTES: A. CONFORMS TO JEDEC REGISTRATION MO-229, VARIATION WEEA, DATED 11/2001 B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994 6 FDFM2P110 Rev. C2 www.fairchildsemi.com FDFM2P110 Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM Across the board. Around the world.TM OPTOLOGIC OPTOPLANARTM The Power Franchise PACMANTM Programmable Active DroopTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 7 FDFM2P110 Rev. C2 www.fairchildsemi.com |
Price & Availability of FDFM2P110
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |